| PART |
Description |
Maker |
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB
Ericsson Microelectronics
|
| SSM3K05FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHALLEL MOS TYPE
|
Toshiba Semiconductor
|
| MRF1518NT1_06 MRF1518NT1 MRF1518NT106 |
RF Power Field Effect Transistor
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MTP5N20 |
POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc
|
| MRF1511N |
RF Power Field Effect Transistor
|
Freescale Semiconductor...
|
| MRF8S7235NR3 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
|
| MRF1517NT1 |
RF Power Field Effect Transistor
|
FREESCALE[Freescale Semiconductor, Inc]
|
| CMT20N503P CMT20N50 |
POWER FIELD EFFECT TRANSISTOR
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| MTH6N60 MTH6N55 |
Power Field Effect Transistor
|
New Jersey Semi-Conduct...
|
